一种高温下测量薄膜电阻温度特性的方法
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中国科学院上海技术物理研究所,中国科学院上海技术物理研究所,中国科学院上海技术物理研究所,中国科学院上海技术物理研究所

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TN 307

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A Method for Measuring Thin Film Resistance-Temperature Characteristics at a High-Temperature
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The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences

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    摘要:

    本文介绍了Rymaszewski四探针法测薄膜方块电阻原理,设计并搭建了可测室温到550℃的四探针测试仪。该系统可在保护气体下变温测量薄层电阻,弥补了四探针法在较高温度测量薄膜电阻率的不足。制备并测试了多晶硅及铂薄膜的电阻温度特性,用多项式拟合了在该温度范围内电阻温度系数,并分析了方法可靠性。

    Abstract:

    This paper describes the principle of Rymaszewski’s formulas for four-point probe method to measure thin-film resistance. Design and build a four-point probe method system that can measure thin-film resistance at the temperature from normal atmospheric temperature to 550℃.This system can measure thin-film resistance at a changing temperature within protective gas, and makes up the weak point of four-point probe method at a high temperature. This paper prepares poly-silicon film and platinum film, and tests their resistance-temperature characteristics. It matches the temperature coefficient of resistance by polynomial. At last it analysis the reliability of the new method.

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张志浩,马斌,施永明,等. 一种高温下测量薄膜电阻温度特性的方法[J]. 科学技术与工程, 2014, 14(21): .
zhang zhi hao, ma bin, shi yong min, et al. A Method for Measuring Thin Film Resistance-Temperature Characteristics at a High-Temperature[J]. Science Technology and Engineering,2014,14(21).

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  • 收稿日期:2014-03-14
  • 最后修改日期:2014-04-11
  • 录用日期:2014-04-09
  • 在线发布日期: 2014-07-28
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