由高斯型波函数计算GaAs量子点中电子-空穴与声学声子的耦合特性
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暨南大学电子工程系

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O.471.1

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On the computation of coupling characteristics between electron-hole and acoustic phonons in GaAs quantum dots based on Gaussian wavefunctions
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    摘要:

    在固态-空腔量子电动力学系统中,研究半导体量子点跟固体环境中声学声子耦合时,通常忽略压电耦合,仅考虑形变势耦合。本文针对GaAs量子点的不同尺寸(12 nm或24 nm),由高斯型波函数出发并考虑电子和空穴局域化长度差别(δl=l_e-l_h),计算并给出量子点跟声学声子两种耦合机制对应的声子谱函数,以及声子辅助量子点耦合空腔的散射率。结果发现δl/l_e取值变化(0.1或0.2)时,对于小尺寸量子点,压电耦合跟形变势耦合相比都可以忽略;对于大尺寸量子点中,δl/l_e取0.2时压电耦合跟形变势耦合相比就变得不能忽略。

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    In solid-state cavity quantum electrodynamics (cQED) systems, semiconductor quantum dots (QDs) interact with bulk phonons in the solid environment besides interacting with the cavity mode. When a QD interacts with acoustic phonons, deformation potential coupling is usually considered much more important than piezoelectric coupling. Based on Gaussian wavefunctions, the coupling matrix elements between electron-hole and acoustic phonons were calculated for two GaAs QDs of different sizes (12 nm or 24 nm). The difference between electron’s and hole’s localized length (δl=l_e-l_h) has been taken into consideration. Then the feeding rates of acoustic phonons due to two coupling mechanisms were calculated. Changing δl/l_e from 0.1 to 0.2, the piezoelectric coupling can be ignored compared with deformation potential coupling for the small size QD. However, the piezoelectric coupling can not be ignored when δl/l_e is 0.2 for the big size QD.

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张明亮. 由高斯型波函数计算GaAs量子点中电子-空穴与声学声子的耦合特性[J]. 科学技术与工程, 2014, 14(5): .
ZHANG Ming-Liang. On the computation of coupling characteristics between electron-hole and acoustic phonons in GaAs quantum dots based on Gaussian wavefunctions[J]. Science Technology and Engineering,2014,14(5).

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历史
  • 收稿日期:2013-09-22
  • 最后修改日期:2013-09-22
  • 录用日期:2013-10-23
  • 在线发布日期: 2014-02-28
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