Studying electrical nature of a basic device structure- metal/porous silicon/silicon has active meaning on understanding and improving porous silicon’s electroluminescence and porous silicon’s other application in electricity. Porous silicon is made by electrochemical etching. Porous silicon is electrochemical oxidized and annealed in N2. The effect of post treatment of porous silicon on porous silicon’s rectification is studied. After electrochemical oxidizing in concentrated sulfuric acid, the rectification character of porous silicon disappear; after annealing in N2, the rectification character of porous silicon increased. The mechanism is analyzed.
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彭爱华. 多孔硅整流特性研究[J]. 科学技术与工程, 2009, 9(21): . peng ai hua. Study on Rectification Character of Porous Silicon[J]. Science Technology and Engineering,2009,9(21).